On ultra-wide-bandgap semiconductors, but particularly diamond

Srabanti Chowdhury

doi:10.1117/12.2590578

15 April 2021 On ultra-wide-bandgap semiconductors, but particularly diamond

Srabanti Chowdhury

Proceedings Volume 11742, Radar Sensor Technology XXV; 117420Y (2021) https://doi.org/10.1117/12.2590578
Event: SPIE Defense + Commercial Sensing, 2021, Online Only

Abstract

The demand of higher power density from power converters has increased since its very origin and increased by 3 orders of magnitude over the last 40 years. This trend is not just seen in power conversion, but also in Radar communication where RF power density is the metric. So, although very different in applications, both power converter and RF power amplifiers are relying on a roadmap decorated with WBG and Ultra-WBG materials. Beyond GaN and SiC, Ga2O3, Diamond and AlN have been explored for some time in academia, government labs, and industry. All these materials come with their own merits and demerits; doping efficiency being of utmost relevance for their application as a semiconductor device. Diamond, with a bandgap of 5.47eV is definitely a very attractive material for its large critical electric field (3x more than SiC), high thermal conductivity (6x more than SiC) and other carrier transport properties.

Conference Presentation

Citation Download Citation

Srabanti Chowdhury "On ultra-wide-bandgap semiconductors, but particularly diamond", Proc. SPIE 11742, Radar Sensor Technology XXV, 117420Y (15 April 2021); https://doi.org/10.1117/12.2590578

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