Selective Laser Epitaxy Of GaAs On GaAs Substrates

N. A. El-Masry; S. A. Hussien

doi:10.1117/12.963976

23 February 1990 Selective Laser Epitaxy Of GaAs On GaAs Substrates

N. A. El-Masry, S. A. Hussien

Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963976
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

Selective epitaxy by direct writing of thin films GaAs using laser chemical vapor deposition on GaAs substrates has been achieved. Careful control of the deposition parameters for the epitaxial growth is is necessary. The deposited materials are comparable to those grown with conventional metalorganic vapor deposition techniques. We report a model on the growth conditions that can be used without the occurrence of plastic deformation in the epitaxial films. The model considers the thermal stresses that induce lattice distortion in GaAs substrates. This lattice distortion is caused by heating with laser beam which has a Gaussian power density distribution. Experimental results are compared with the model.

Citation Download Citation

N. A. El-Masry and S. A. Hussien "Selective Laser Epitaxy Of GaAs On GaAs Substrates", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); https://doi.org/10.1117/12.963976

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