Improved GeSn microdisk lasers directly sitting on Si

Youngmin Kim; Simone Assali; Daniel Burt; Yongduck Jung; Hyo-Jun Joo; Melvina Chen; Zoran Ikonic; Oussama Moutanabbir; Donguk Nam

doi:10.1117/12.2610599

5 March 2022 Improved GeSn microdisk lasers directly sitting on Si

Youngmin Kim, Simone Assali, Daniel Burt, Yongduck Jung, Hyo-Jun Joo, Melvina Chen, Zoran Ikonic, Oussama Moutanabbir, Donguk Nam

Author Affiliations +

Proceedings Volume 12006, Silicon Photonics XVII; 120060M (2022) https://doi.org/10.1117/12.2610599
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

In the quest for practical group IV lasers, researchers have proposed a few ideas such as strain engineering of Ge and alloying of Sn into Ge. Both approaches fundamentally alter bandstructure such that Ge can become a direct bandgap material. Recently, relaxation of limiting compressive strain and addition of mechanical tensile strain have been employed to improve the lasing performance. However, such strain engineering has thus far been possible only in suspended device configurations, which significantly limit heat dissipation and hinder the device performance. We herein demonstrate GeSn microdisk lasers fully released on Si that relax the limiting compressive strain and achieve excellent thermal conduction.

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Citation Download Citation

Youngmin Kim, Simone Assali, Daniel Burt, Yongduck Jung, Hyo-Jun Joo, Melvina Chen, Zoran Ikonic, Oussama Moutanabbir, and Donguk Nam "Improved GeSn microdisk lasers directly sitting on Si", Proc. SPIE 12006, Silicon Photonics XVII, 120060M (5 March 2022); https://doi.org/10.1117/12.2610599

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