Charge-transfer processes in semiconductor colloids

Prashant V. Kamat; K. R. Gopidas

doi:10.1117/12.17896

1 April 1990 Charge-transfer processes in semiconductor colloids

Prashant V. Kamat, K. R. Gopidas

Proceedings Volume 1209, Picosecond and Femtosecond Spectroscopy from Laboratory to Real World; (1990) https://doi.org/10.1117/12.17896
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

A picosecond transient absorption spectroscopy technique has been employed to probe the charge transfer processes in Ti02 semiconductor colloids. The trapping of electrons at the TiO surface (Ti4+ sitesY was characterized from the appearance of a broad absorption in the region of 550-750 nm following the 355-nm laser pulse excitation of Ti02 colloids. The lifetime of these trapped charge carriers increased upon incorporation of a hole scavenger in the colloidal semiconductor system. The mechanistic and kinetic details of the charge injection from excited CdS into a large bandgap semiconductor such as AgI and Ti02 have also been inves-' t i ga ted.

Citation Download Citation

Prashant V. Kamat and K. R. Gopidas "Charge-transfer processes in semiconductor colloids", Proc. SPIE 1209, Picosecond and Femtosecond Spectroscopy from Laboratory to Real World, (1 April 1990); https://doi.org/10.1117/12.17896

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available