Paper
20 December 2021 UV sensitive heterojunction ZnCoO/n-GaP prepared by spray pyrolysis
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Proceedings Volume 12126, Fifteenth International Conference on Correlation Optics; 121261U (2021) https://doi.org/10.1117/12.2616163
Event: Fifteenth International Conference on Correlation Optics, 2021, Chernivtsi, Ukraine
Abstract
The I-V and C-V–characteristics of the isotype Zn1-xCoxO/n-GaP heterojunction fabricated by spray pyrolysis of Zn1-xCoxO thin films on n-GaP crystalline substrates have been investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse currents and the conditions of generating reverse current are analyzed. The dynamics of changes in the capacitive parameters of Zn1-xCoxO thin film based on the C-V–characteristics is established. The photoelectric properties of the heterostructure are analyzed.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivan G. Оrletskyi, Eduard V. Maistruk, Ivan P. Koziarskyi, and Dmytro P. Koziarskyi "UV sensitive heterojunction ZnCoO/n-GaP prepared by spray pyrolysis", Proc. SPIE 12126, Fifteenth International Conference on Correlation Optics, 121261U (20 December 2021); https://doi.org/10.1117/12.2616163
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KEYWORDS
Zinc

Heterojunctions

Cobalt

Resistance

Ultraviolet radiation

Capacitance

Semiconductors

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