Paper
20 January 2022 Surface modification of single-crystal silicon by hybrid laser treatment
Author Affiliations +
Proceedings Volume 12154, 13th International Photonics and OptoElectronics Meetings (POEM 2021); 1215410 (2022) https://doi.org/10.1117/12.2626902
Event: 13th International Photonics and OptoElectronics Meetings (POEM 2021), 2021, Wuhan, China
Abstract
In this paper, recent work on picosecond and nanosecond hybrid laser treatment of mechanically sawed single-crystal silicon wafer is presented. Surface morphology, surface roughness and phase development has been analyzed by 3D laser scanning confocal microscope (LSCM), X-ray diffraction (XRD), and scanning electron microscope (SEM). Results show that as-received surface defects including SiO2 layer and saw-mark defects have been significantly reduced, while average surface roughness has been decreased. No obvious damages such as micro-cracks and micropores have been observed at the laser-treated surface. Moreover, residual stress and electrical resistivity of laser-treated surface has been measured, respectively. The insights obtained in this work provide a facile method to improve surface quality of mechanically machined silicon wafer.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinxin Li, Zhiquan Cui, and Yingchun Guan "Surface modification of single-crystal silicon by hybrid laser treatment", Proc. SPIE 12154, 13th International Photonics and OptoElectronics Meetings (POEM 2021), 1215410 (20 January 2022); https://doi.org/10.1117/12.2626902
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon

Semiconducting wafers

Picosecond phenomena

Surface roughness

Scanning electron microscopy

Laser processing

Resistance

Back to Top