Amplified spontaneous emission effects in bulk and quantum well semiconductor laser amplifiers

Weng W. Chow; Richard R. Craig

doi:10.1117/12.18120

1 May 1990 Amplified spontaneous emission effects in bulk and quantum well semiconductor laser amplifiers

Weng W. Chow, Richard R. Craig

Proceedings Volume 1216, Nonlinear Optical Materials and Devices for Photonic Switching; (1990) https://doi.org/10.1117/12.18120
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

We investigated the effects of increasing excitation on the performance of semiconductor laser amplifiers. Amplified spontaneous emission (ASE) is a limitation to the power scaling of these devices. A Rigrod analysis is used to study the effects of ASE on the gain, signal-to-noise ratio and efficiency for different values of injection current, facet reflectivity and input laser intensity. Comparisons are made between bulk and quantum well gain media.

Citation Download Citation

Weng W. Chow and Richard R. Craig "Amplified spontaneous emission effects in bulk and quantum well semiconductor laser amplifiers", Proc. SPIE 1216, Nonlinear Optical Materials and Devices for Photonic Switching, (1 May 1990); https://doi.org/10.1117/12.18120

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