Paper
27 March 2022 Preparation and etching of the mask of the type II superlattice for focal plane arrays
Author Affiliations +
Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 121696B (2022) https://doi.org/10.1117/12.2624742
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China
Abstract
In the research of the InAs/GaSb type II superlattice, MW/SW、MW/LW、MW/MW two color superlattice infrared focal detector has been developed abroad [1]. In this paper, we study the uniformity, compactness and etching resisrance of the mask prepared by PECVD. It has been proved that dry etching can satisfied the superlattice material etching depth by experiment [2]. When the experimental condition is that the CH4:H2:Cl2:Ar flow ratio is 8:15:6:15, ICP power is 400 W, and the reaction pressure is 1.0 Pa,it can be etched to the requirements of two-color superlattice depth with clear、flat mesa and no residual generation [3]. The experiment optimizes the etching technology of two-color superlattice material, and the etching result meets the requirements of the etching depth and quality of the two-color superlattice chip.
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Wen Wang, Dongying Wu, Xubo Zhu, Fei Tao, and Yanqiu Lv "Preparation and etching of the mask of the type II superlattice for focal plane arrays", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 121696B (27 March 2022); https://doi.org/10.1117/12.2624742
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KEYWORDS
Etching

Superlattices

Refractive index

Plasma enhanced chemical vapor deposition

Silica

Ions

Infrared detectors

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