Fundamental transverse mode 100-mW semiconductor laser with high reliability

Takao Yamaguchi; Keiichi Yodoshi; Kimihide Minakuchi; Yasuaki Inoue; Koji Komeda; Norio Tabuchi; Yasuyuki Bessho; Kazushi Mori; Tatsuhiko Niina

doi:10.1117/12.18248

1 May 1990 Fundamental transverse mode 100-mW semiconductor laser with high reliability

Takao Yamaguchi, Keiichi Yodoshi, Kimihide Minakuchi, Yasuaki Inoue, Koji Komeda, Norio Tabuchi, Yasuyuki Bessho, Kazushi Mori, Tatsuhiko Niina

Author Affiliations +

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18248
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2000 hours at 60 C.

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Takao Yamaguchi, Keiichi Yodoshi, Kimihide Minakuchi, Yasuaki Inoue, Koji Komeda, Norio Tabuchi, Yasuyuki Bessho, Kazushi Mori, and Tatsuhiko Niina "Fundamental transverse mode 100-mW semiconductor laser with high reliability", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18248

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