Presentation + Paper
3 October 2022 Charge-density-wave phase transitions in quasi-2D 1T-TaS2/h-BN heterostructure devices
Jonas O. Brown, Maedeh Taheri, Nicholas R. Sesing, Tina T. Salguero, Fariborz Kargar, Alexander A. Balandin
Author Affiliations +
Abstract
In this invited contribution, we review recent results and report on the phase transitions and de-pinning of the charge-density waves in single-crystal 1T-TaS2 thin-film and 1T-TaS2 / h-BN heterostructure devices. It is known that 1T-TaS2 reveals charge-density-wave phases below and above room temperature. The de-pinning of the charge-density waves in the quasi-2D materials is different from that in “conventional” bulk charge-density-wave materials with quasi-1D motifs in the crystal structure. The de-pinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current – in contrast to de-pinning in the conventional charge-density-wave materials with the quasi-1D crystal structure. The obtained results contribute to the development of the charge-density-wave devices for applications in electronics and optoelectronics.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jonas O. Brown, Maedeh Taheri, Nicholas R. Sesing, Tina T. Salguero, Fariborz Kargar, and Alexander A. Balandin "Charge-density-wave phase transitions in quasi-2D 1T-TaS2/h-BN heterostructure devices", Proc. SPIE 12200, Low-Dimensional Materials and Devices 2022, 1220004 (3 October 2022); https://doi.org/10.1117/12.2637881
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KEYWORDS
Crystals

Heterojunctions

Switching

Crystallography

Electronics

Thin films

Metals

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