Paper
3 October 2022 Simultaneous confinement of acoustic phonons and near infrared photons in GaAs/AlAs multilayers by band inversion
Author Affiliations +
Abstract
GaAs/AlAs heterostructures constitute a unique platform for the conception, engineering, and implementation of opto-phononic systems. In addition to all the accumulated know-how inherited from the optoelectronics industry, a unique coincidence in the contrasts of the optical and acoustic impedances, and the speeds of light and sound, enable a perfect colocalization of the optical electric and acoustic displacement fields. We present the design principles for GaAs/AlAs opto-phononic heterostructures supporting topological interface modes and further analyse the performance of these structures in the optical and the acoustic domain.
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Priya Priya, Anne Rodriguez, Omar Ortiz, Aristide Lemaitre, Martin Esmann, and Norberto Daniel Lanzillotti-Kimura "Simultaneous confinement of acoustic phonons and near infrared photons in GaAs/AlAs multilayers by band inversion", Proc. SPIE 12202, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XIX, 1220209 (3 October 2022); https://doi.org/10.1117/12.2633360
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KEYWORDS
Acoustics

Interfaces

Gallium arsenide

Reflectivity

Phonons

Photoelasticity

Photons

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