Presentation
17 March 2023 3-W output power at 2 µm from a flip-chip processed InGaSb VECSEL based on a hybrid metal-semiconductor Bragg reflector
Author Affiliations +
Abstract
The key limiting factor for output power scaling of VECSELs is the thermal resistance of the structure owing to the reflector thickness and the heat conductivity of the semiconductor materials. We have successfully fabricated a flip-chip processed VECSEL emitting at 2 µm using a GaSb/AlAs0.08Sb0.92 hybrid Bragg reflector with 10.5 mirror pairs and a 100–nm copper layer. The flip-chip processed VECSEL reaches a record high continuous wave average output power of 3 W. The device thickness is reduced by 2.5 µm (36%) compared to the standard 19.5 layer semiconductor-only Bragg reflector design.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicolas Huwyler, Marco Gaulke, Jonas Heidrich, Matthias Golling, Ajanta Barh, and Ursula Keller "3-W output power at 2 µm from a flip-chip processed InGaSb VECSEL based on a hybrid metal-semiconductor Bragg reflector", Proc. SPIE 12404, Vertical External Cavity Surface Emitting Lasers (VECSELs) XII, 1240406 (17 March 2023); https://doi.org/10.1117/12.2649717
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KEYWORDS
Reflectors

Mirrors

Copper

Metals

Reflectivity

Diffusion

Gallium antimonide

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