PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The key limiting factor for output power scaling of VECSELs is the thermal resistance of the structure owing to the reflector thickness and the heat conductivity of the semiconductor materials. We have successfully fabricated a flip-chip processed VECSEL emitting at 2 µm using a GaSb/AlAs0.08Sb0.92 hybrid Bragg reflector with 10.5 mirror pairs and a 100–nm copper layer. The flip-chip processed VECSEL reaches a record high continuous wave average output power of 3 W. The device thickness is reduced by 2.5 µm (36%) compared to the standard 19.5 layer semiconductor-only Bragg reflector design.
Nicolas Huwyler,Marco Gaulke,Jonas Heidrich,Matthias Golling,Ajanta Barh, andUrsula Keller
"3-W output power at 2 µm from a flip-chip processed InGaSb VECSEL based on a hybrid metal-semiconductor Bragg reflector", Proc. SPIE 12404, Vertical External Cavity Surface Emitting Lasers (VECSELs) XII, 1240406 (17 March 2023); https://doi.org/10.1117/12.2649717
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Nicolas Huwyler, Marco Gaulke, Jonas Heidrich, Matthias Golling, Ajanta Barh, Ursula Keller, "3-W output power at 2 µm from a flip-chip processed InGaSb VECSEL based on a hybrid metal-semiconductor Bragg reflector," Proc. SPIE 12404, Vertical External Cavity Surface Emitting Lasers (VECSELs) XII, 1240406 (17 March 2023); https://doi.org/10.1117/12.2649717