Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Akira Uedono; Hideki Sakurai; Jun Uzuhashi; Tetsuo Narita; Kacper Sierakowski; Shoji Ishibashi; Shigefusa F. Chichibu; Michal Bockowski; Jun Suda; Tadakatsu Ohokubo; Nobuyuki Ikarashi; Kazuhiro Hono; Tetsu Kachi

doi:10.1117/12.2646233

15 March 2023 Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi

Author Affiliations +

Proceedings Volume 12421, Gallium Nitride Materials and Devices XVIII; 124210C (2023) https://doi.org/10.1117/12.2646233
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Behaviors of vacancy-type defects in ion-implanted GaN were studied by means of positron annihilation. Si or Mg ions were implanted into GaN to obtain 300-nm-deep box profiles of the impurities. The ion-implanted samples were annealed up to 1480°C under a N₂ pressure of 1 GPa (ultra-high-pressure annealing: UHPA). For as-implanted GaN, the major defect species was identified as Ga-vacancy-type defects such as a divacancy (V_GaV_N). After annealing above 1000°C, vacancy clusters, such as (V_GaV_N)₃, were introduced, and they were found to be remained even after 1480°C annealing. For Mg-implanted GaN with [Mg]=10¹⁸ cm^-3, no large change in the depth distribution of Mg was observed before and after annealing at 1400°C. For the sample with [Mg]=10¹⁹ cm^-3, however, Mg diffused into the bulk, which was attributed to the over-doping of Mg and their vacancy-assisted diffusion. The Mg diffusion was suppressed by sequential N-implantation, which was attributed to the reaction between Mg and vacancies under a N-rich condition. Interactions between vacancies, Mg, and H during UHPA were also discussed.

Conference Presentation

Citation Download Citation

Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, and Tetsu Kachi "Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam", Proc. SPIE 12421, Gallium Nitride Materials and Devices XVIII, 124210C (15 March 2023); https://doi.org/10.1117/12.2646233

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available