III-N optoelectronic devices: understanding the physics of electro-optical degradation

Matteo Meneghini; Nicola Roccato; Francesco Piva; Carlo De Santi; Matteo Buffolo; Camille Haller; Jean-François Carlin; Nicolas Grandjean; Alberto Tibaldi; Francesco Bertazzi; Michele Goano; Giovanni Verzellesi; Tim Wernicke; Michael Kneissl; Gaudenzio Meneghesso; Enrico Zanoni

doi:10.1117/12.2649909

14 March 2023 III-N optoelectronic devices: understanding the physics of electro-optical degradation

Matteo Meneghini, Nicola Roccato, Francesco Piva, Carlo De Santi, Matteo Buffolo, Camille Haller, Jean-François Carlin, Nicolas Grandjean, Alberto Tibaldi, Francesco Bertazzi, Michele Goano, Giovanni Verzellesi, Tim Wernicke, Michael Kneissl, Gaudenzio Meneghesso, Enrico Zanoni

Author Affiliations +

Proceedings Volume 12441, Light-Emitting Devices, Materials, and Applications XXVII; 124410D (2023) https://doi.org/10.1117/12.2649909
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

III-N optoelectronic devices are of great interest for many applications. Visible emitters (based on InGaN) are widely used in the lighting, display and automotive fields. Ultraviolet LEDs (based on AlGaN) are expected to be widely used for disinfection, medical treatments, surface curing and sensing. Photodetectors and solar cells based on InGaN are also of interest, thanks to their great robustness and wavelength tunability. III-N semiconductors are expected to be robust, thanks to the wide bandgap (allowing high temperature operation) and to the high breakdown field (favoring the robustness against electrostatic discharges and electrical overstress). However, InGaN- and AlGaN-based devices can show a significant degradation when submitted to long-term ageing. Several driving forces can contribute to the worsening of the electrical and optical characteristics, including the operating temperature, the current, and the rate of non-radiative recombination in the quantum wells. The goal of this paper is to discuss the physics of degradation of III-V devices, by presenting a set of recent case studies, evaluated in our laboratories.

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Matteo Meneghini, Nicola Roccato, Francesco Piva, Carlo De Santi, Matteo Buffolo, Camille Haller, Jean-François Carlin, Nicolas Grandjean, Alberto Tibaldi, Francesco Bertazzi, Michele Goano, Giovanni Verzellesi, Tim Wernicke, Michael Kneissl, Gaudenzio Meneghesso, and Enrico Zanoni "III-N optoelectronic devices: understanding the physics of electro-optical degradation", Proc. SPIE 12441, Light-Emitting Devices, Materials, and Applications XXVII, 124410D (14 March 2023); https://doi.org/10.1117/12.2649909

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KEYWORDS

Light emitting diodes

Quantum wells

Electro optics

Indium gallium nitride

Physics

Optoelectronic devices

Quantum processes

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