Study on microcontact mechanism of chemical mechanical planarization removing

Jianchao Wang; Xuejing Bai; Han Liu

doi:10.1117/12.2655892

20 October 2022 Study on microcontact mechanism of chemical mechanical planarization removing

Jianchao Wang, Xuejing Bai, Han Liu

Proceedings Volume 12451, 5th International Conference on Computer Information Science and Application Technology (CISAT 2022); 124510V (2022) https://doi.org/10.1117/12.2655892
Event: 5th International Conference on Computer Information Science and Application Technology (CISAT 2022), 2022, Chongqing, China

Abstract

Chemical mechanical planarization (CMP) can effectively take into account the global and local flatness of the matters surface. The accurate control of CMP process largely depends on the understanding and of its material removal mechanism. At present, people do not fully understand the removal mechanism of CMP, but still control the CMP process through empirical or semi-empirical means. Therefore, exploring the mechanism of CMP is an important basic research to improve the technical level of CMP. The model is a chemical-mechanical synergetication in the CMP in terms of change in the chemically modified surface layer and wafer surface topography. The model proposed takes process parameters including pressure and velocity and other important input parameters including the wafer hardness, pad roughness and abrasive size into account to predict the material removal rate. At the end of the article, the key technical and future research focus issues that need to be further resolved are put forward.

Citation Download Citation

Jianchao Wang, Xuejing Bai, and Han Liu "Study on microcontact mechanism of chemical mechanical planarization removing", Proc. SPIE 12451, 5th International Conference on Computer Information Science and Application Technology (CISAT 2022), 124510V (20 October 2022); https://doi.org/10.1117/12.2655892

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