Interface-engineered barium hexaferrite-wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions

Vincent G. Harris; Parisa Andalib

doi:10.1117/12.2646468

31 January 2023 Interface-engineered barium hexaferrite-wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions

Vincent G. Harris, Parisa Andalib

Author Affiliations +

Proceedings Volume 12477, International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022; 124770B (2023) https://doi.org/10.1117/12.2646468
Event: International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors, 2022, Boston, Massachusetts, United States

Abstract

Transition from fourth to fifth generation wireless technologies requires a shift from 2.3 GHz to Ka-band with the promise of revolutionary increases in data handling capacity and transfer rates at greatly reduced latency among other benefits. A key enabling technology is the integration of Ka-band massive multiple input–multiple output (m-MIMO) antenna arrays. m-MIMO array elements simultaneously transmit and receive (STAR) data providing true full duplexing in time and frequency domains. A necessary innovation calls for the integration of device quality Ka-ferrites with wide-bandgap (WBG) semiconductor heterostructures allowing for system on-wafer solutions. Here, we report results of systematic studies of pulsed laser deposited (PLD) barium hexaferrite (BaM) films on industrial compatible WBG semiconductor heterostructures suitable for operation in Ka-band circulators.

Citation Download Citation

Vincent G. Harris and Parisa Andalib "Interface-engineered barium hexaferrite-wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions", Proc. SPIE 12477, International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2022, 124770B (31 January 2023); https://doi.org/10.1117/12.2646468

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