Paper
15 December 2022 1.3-μm InAs/GaAs quantum dot superluminescent diodes based on curved waveguide
Xiangbin Su, Chengao Yang, Hanquin Liu, Xiangjun Shang, Shulun Li, Yu Zhang, Haiqiao Ni, Yingqiang Xu, Zhichuan Niu
Author Affiliations +
Proceedings Volume 12478, Thirteenth International Conference on Information Optics and Photonics (CIOP 2022); 124783C (2022) https://doi.org/10.1117/12.2654820
Event: Thirteenth International Conference on Information Optics and Photonics (CIOP 2022), 2022, Xi'an, China
Abstract
In this paper, a broadband and high-power quantum dot superlunminescent diodes have been fabricated based on the self-assembled quantum dot materials grown on GaAs substrate by using molecular beam epitaxy. The source area of the device is a puppet structure with a 5-layer quantum dot with density of 4.6×1010 cm−2. The spinal waveguide is slightly bent at one end with angle of 10°. The device achieved an output power of 12 mW under continuous current with spectrum width of 70 nm at center peak of 1300 nm.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiangbin Su, Chengao Yang, Hanquin Liu, Xiangjun Shang, Shulun Li, Yu Zhang, Haiqiao Ni, Yingqiang Xu, and Zhichuan Niu "1.3-μm InAs/GaAs quantum dot superluminescent diodes based on curved waveguide", Proc. SPIE 12478, Thirteenth International Conference on Information Optics and Photonics (CIOP 2022), 124783C (15 December 2022); https://doi.org/10.1117/12.2654820
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KEYWORDS
Quantum dots

Waveguides

Superluminescent diodes

Gallium arsenide

Quantum communications

Quantum computing

Quantum efficiency

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