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Raman spectroscopy was used to measure the temperature of semiconductor test structures. The structures consist of molybdenum microwires on a Si (100) substrate buried under a 270nm layer of aluminum nitride. The temperature-dependent Raman spectra of the examined materials were measured in a temperature range from 30 °C to 450 °C using a scientific grade temperature stage for calibration. The relationship between the structure’s temperature and its Raman peak position was modeled. This model was used to estimate the temperature distribution across the test structure at different operating powers with high spatial and temperature resolution.
Martin De Biasio,Thomas Arnold,Clement Fleury, andDmytro Solonenko
"Raman spectroscopy for thermal characterization of semiconductor devices", Proc. SPIE 12516, Next-Generation Spectroscopic Technologies XV, 1251611 (15 June 2023); https://doi.org/10.1117/12.2682223
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Martin De Biasio, Thomas Arnold, Clement Fleury, Dmytro Solonenko, "Raman spectroscopy for thermal characterization of semiconductor devices," Proc. SPIE 12516, Next-Generation Spectroscopic Technologies XV, 1251611 (15 June 2023); https://doi.org/10.1117/12.2682223