Poster + Paper
15 June 2023 Raman spectroscopy for thermal characterization of semiconductor devices
Martin De Biasio, Thomas Arnold, Clement Fleury, Dmytro Solonenko
Author Affiliations +
Conference Poster
Abstract
Raman spectroscopy was used to measure the temperature of semiconductor test structures. The structures consist of molybdenum microwires on a Si (100) substrate buried under a 270nm layer of aluminum nitride. The temperature-dependent Raman spectra of the examined materials were measured in a temperature range from 30 °C to 450 °C using a scientific grade temperature stage for calibration. The relationship between the structure’s temperature and its Raman peak position was modeled. This model was used to estimate the temperature distribution across the test structure at different operating powers with high spatial and temperature resolution.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin De Biasio, Thomas Arnold, Clement Fleury, and Dmytro Solonenko "Raman spectroscopy for thermal characterization of semiconductor devices", Proc. SPIE 12516, Next-Generation Spectroscopic Technologies XV, 1251611 (15 June 2023); https://doi.org/10.1117/12.2682223
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KEYWORDS
Temperature metrology

Raman spectroscopy

Aluminum nitride

Molybdenum

High temperature raman spectroscopy

Semiconductors

Silicon

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