Vacuum passivated T-gates: a new method for fabricating submicron gates

Donald K. Atwood

doi:10.1117/12.20160

1 May 1990 Vacuum passivated T-gates: a new method for fabricating submicron gates

Donald K. Atwood

Proceedings Volume 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX; (1990) https://doi.org/10.1117/12.20160
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

This paper will outline a novel technique for fabricating T-gates. Although dependent upon two lithographic exposures, this process is more robust and flexible than existing techniques. The resultant gates are structurally stable, with electrical resistance that can be made arbitrarily small by increasing the size of the T-gate top. Moreover, this gate process is fully compatible with existing MESFET and HEMT fabrication methods. Performance of microwave devices will be presented, contrasting 0.25 tm conventional gates with vacuum passivated T-gates. The T-gates will be shown to offer superior breakdown and gain performance and to produce FET characteristics which remain stable from gate level to final frontside.

Citation Download Citation

Donald K. Atwood "Vacuum passivated T-gates: a new method for fabricating submicron gates", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); https://doi.org/10.1117/12.20160

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