Electric-field induced modification of the photoluminescence polarization in Ge/Si0.15Ge0.85 quantum wells

Simone Rossi; Enrico Talamas Simola; Marta Raimondo; Maurizio Acciarri; Jacopo Pedrini; Andrea Balocchi; Xavier Marie; Giovanni Isella; Fabio Pezzoli

doi:10.1117/12.2678909

28 September 2023 Electric-field induced modification of the photoluminescence polarization in Ge/Si_0.15Ge_0.85 quantum wells

Simone Rossi, Enrico Talamas Simola, Marta Raimondo, Maurizio Acciarri, Jacopo Pedrini, Andrea Balocchi, Xavier Marie, Giovanni Isella, Fabio Pezzoli

Author Affiliations +

Proceedings Volume 12656, Spintronics XVI; 126560I (2023) https://doi.org/10.1117/12.2678909
Event: SPIE Nanoscience + Engineering, 2023, San Diego, California, United States

Abstract

The manipulation of the spin degree of freedom is highly sought after in the field of spintronics. This study looks at the emergence of Rashba physics in group IV materials, such as p-i-n diodes that contain Ge quantum wells and Si_0.15Ge_0.85barriers. By using optical spin orientation, it was found that the circular polarization degree of the direct emission can be increased by increasing the power of the optical pump, while the device remains unbiased. This is attributed to the optical-induced changes in the built-in Rashba field due to the asymmetric doping of the diode structure. These findings can provide a new way to fine-tune the material properties for spin quantum electronic and optical applications.

Citation Download Citation

Simone Rossi, Enrico Talamas Simola, Marta Raimondo, Maurizio Acciarri, Jacopo Pedrini, Andrea Balocchi, Xavier Marie, Giovanni Isella, and Fabio Pezzoli "Electric-field induced modification of the photoluminescence polarization in Ge/Si_0.15Ge_0.85 quantum wells", Proc. SPIE 12656, Spintronics XVI, 126560I (28 September 2023); https://doi.org/10.1117/12.2678909

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