We, theoretically study the emergence of Akhmediev Breather (AB) that develops via modulation instability in an Ultra-Silicon-Rich Nitride (USRN) waveguide. The nonlinear parameter of the USRN waveguide is 106 times as large as that in single mode fiber with exceptionally strong dispersion induced by the stopband in a cladding modulated Bragg grating (CMBG). This significantly reduces the length scale and input power required for light-matter interaction to take place. We show that at small input powers, the waveguide can trigger strong modulation instability close to the waveguide input. This allows a fully developed AB to form within the first 1-3 mm of a 6 mm waveguide. Realizing MI and AB on an integrated chip offers the opportunity to study a variety of nonlinear phenomena such as supercontinuum generation, Fermi-Pasta-Ulam (FPU) recurrence, and optical rogue waves in highly compact, CMOS-compatible form factors.
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