Optimization of modulation doped FET structures

Paul J. Tasker; Mark C. Foisy; Loi D. Nguyen

doi:10.1117/12.20921

1 August 1990 Optimization of modulation doped FET structures

Paul J. Tasker, Mark C. Foisy, Loi D. Nguyen

Author Affiliations +

Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20921
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

The Modulation Doped Transistor (MODFET) has recently achieved its predicted performance goals, thus demonstrating its potential for providing the semiconductor transistor component necessary for future high speed and millimeter wave integrated systems. This high performance has been achieved through i) the optimization of MBE growth of pseudomorphic heterojunctions, ii) modifications to the epitaxial layer design based on new physical insight into the operation of MODFET structures at high frequency and iii) improvements in the FET fabrication and “layout” structure (geometry) to minimize resistive and reactive parasitic impedances.

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Paul J. Tasker, Mark C. Foisy, and Loi D. Nguyen "Optimization of modulation doped FET structures", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); https://doi.org/10.1117/12.20921

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