Hybrid integrated laser at visible wavelengths using aluminum nitride photonic integrated circuit

Nikolay Videnov; Matthew L. Day; Michal Bajcsy

doi:10.1117/12.3000556

12 March 2024 Hybrid integrated laser at visible wavelengths using aluminum nitride photonic integrated circuit

Nikolay Videnov, Matthew L. Day, Michal Bajcsy

Proceedings Volume 12889, Integrated Optics: Devices, Materials, and Technologies XXVIII; 1288903 (2024) https://doi.org/10.1117/12.3000556
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

We show the first demonstration of a hybrid external cavity diode laser (ECDL) using aluminum nitride (AlN) as the wave-guiding material. Two devices are presented, a near-infrared (NIR) laser using a 850 nm diode and a red laser using a 650 nm diode. The NIR laser has ≈1 mW on chip power, 6 nm of spectral coverage, instantaneous linewidth of 720±80 kHz, and 12 dB side mode suppression ratio (SMSR). The red laser has 15 dB SMSR.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Nikolay Videnov, Matthew L. Day, and Michal Bajcsy "Hybrid integrated laser at visible wavelengths using aluminum nitride photonic integrated circuit", Proc. SPIE 12889, Integrated Optics: Devices, Materials, and Technologies XXVIII, 1288903 (12 March 2024); https://doi.org/10.1117/12.3000556

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