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13 March 2024 InAs quantum dash lasers for 2-μm photonics
Rafael Jumar Chu, Tsimafei Laryn, Won Jun Choi, Daehwan Jung
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Proceedings Volume 12905, Novel In-Plane Semiconductor Lasers XXIII; 129050Q (2024) https://doi.org/10.1117/12.3001961
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
The 2 μm spectral window is a host of a variety of applications in communication and sensing. However, the development of nanoscale emitters for this window has largely stagnated. Here, we present our growth, fabrication, and testing of InAs quantum dash (Qdash) lasers on InP for 2 μm photonics. The samples were grown by molecular beam epitaxy. Ridge waveguide lasers emitted at 1.97 μm, coinciding with the ground-state emission from the Qdash ensemble. A low threshold current density of 131 A/cm2 per Qdash layer was calculated under pulsed mode conditions. Good thermal stability was observed up to 50 °C, with a characteristic temperature of 44 K. InAs Qdash on InP is promising 0D laser gain materials for 2 μm communication and sensing.
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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Rafael Jumar Chu, Tsimafei Laryn, Won Jun Choi, and Daehwan Jung "InAs quantum dash lasers for 2-μm photonics", Proc. SPIE 12905, Novel In-Plane Semiconductor Lasers XXIII, 129050Q (13 March 2024); https://doi.org/10.1117/12.3001961
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KEYWORDS
Indium arsenide
Optoelectronic devices
Quantum dot lasers
Short wave infrared radiation
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