Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure

Maurice Wanitzek; Michael Hack; Harishnarayan Ramachandra; Lukas Seidel; Daniel Schwarz; Jörg Schulze; Michael Oehme

doi:10.1117/12.3028061

2 October 2024 Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure

Maurice Wanitzek, Michael Hack, Harishnarayan Ramachandra, Lukas Seidel, Daniel Schwarz, Jörg Schulze, Michael Oehme

Author Affiliations +

Proceedings Volume 13109, Metamaterials, Metadevices, and Metasystems 2024; 1310907 (2024) https://doi.org/10.1117/12.3028061
Event: Nanoscience + Engineering, 2024, San Diego, California, United States

Abstract

We demonstrate Ge-on-Si avalanche photodiodes based on a separate absorption, charge, and multiplication structure using a novel double mesa structure. This double mesa structure effectively confines the electric field inside the diode, as confirmed through simulation data. This leads to a reduced contribution of charge carriers from interface states at the etched sidewalls to the dark current. The diodes exhibit a dark current reduction by a factor of 7 compared to a standard single mesa structure, while the optical properties remain unchanged. At a wavelength of 1310 nm, a maximum optical responsivity of 10.1 A/W, corresponding to a gain of 46, is achieved. Temperature-dependent dark current measurements showed an increase of the underlying activation energy from 0.13 eV to 0.28 eV. This results to a dark current of 0.14 nA at a temperature of 170 K and a bias voltage of 95 % V_BD, which is approximately 100 times smaller than that of the single mesa APDs at 12.7 nA.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Maurice Wanitzek, Michael Hack, Harishnarayan Ramachandra, Lukas Seidel, Daniel Schwarz, Jörg Schulze, and Michael Oehme "Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure", Proc. SPIE 13109, Metamaterials, Metadevices, and Metasystems 2024, 1310907 (2 October 2024); https://doi.org/10.1117/12.3028061

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE