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5 July 2024 Single GaAs nanowire-based high-performance photodetectors
Yonghao Ma, Yanbin Yang, Huan Qian
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Proceedings Volume 13183, International Conference on Optoelectronic Information and Functional Materials (OIFM 2024); 131830G (2024) https://doi.org/10.1117/12.3033874
Event: The 3rd International Conference on Optoelectronic Information and Functional Materials (OIFM 2024), 2024, Wuhan, China
Abstract
The straight bandgap, high electron mobility, and good light absorption properties of gallium arsenide (GaAs) nanowires (NWs) make them great candidates for infrared photodetectors. In this study, we describe the synthesis of high-quality single-crystal GaAs NWs by solid-source chemical vapor deposition (SSCVD) and evaluate their photodetection performance. The prepared GaAs NWs exhibit excellent optoelectronic properties at a wavelength of 792 nm, with a photoresponsivity(R) of 3.65 A/W and a detectivity (D*) of 3.68×1011 Jones, as well as excellent sensitivity and reproducibility. These findings emphasize the potential application of GaAs NWs in photodetector technology.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Yonghao Ma, Yanbin Yang, and Huan Qian "Single GaAs nanowire-based high-performance photodetectors", Proc. SPIE 13183, International Conference on Optoelectronic Information and Functional Materials (OIFM 2024), 131830G (5 July 2024); https://doi.org/10.1117/12.3033874
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KEYWORDS
Gallium arsenide
Nanowires
Photodetectors
Chemical vapor deposition
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