Lithographic imaging analysis of new EUV mask blank materials and their architectures

Supriya L. Jaiswal; Andrew M. C. Dawes

doi:10.1117/12.3036729

13 November 2024 Lithographic imaging analysis of new EUV mask blank materials and their architectures

Supriya L. Jaiswal, Andrew M. C. Dawes

Proceedings Volume 13216, Photomask Technology 2024; 132160B (2024) https://doi.org/10.1117/12.3036729
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Abstract

Astrileux and Synopsys demonstrate the performance of new multilayer mask blank materials on photoresists and wafers in next generation lithography. We present new mask materials that exhibit superior on-wafer imaging properties, and improved performance in critical lithography parameters such as dose, Critical Dimensions (CD), Normalized Image Log Slop (NILS) and Depth of Focus (DOF). Specifically, we examine the optimization of material and architecture properties of coatings and demonstrate how their reflectivity profiles influence the CDs obtained for different pitches, illumination conditions and complex numerical aperture systems. Consequently, we can quantify direct improvements in CD as a result of new mask materials and their architectures.

Conference Presentation

Citation Download Citation

Supriya L. Jaiswal and Andrew M. C. Dawes "Lithographic imaging analysis of new EUV mask blank materials and their architectures", Proc. SPIE 13216, Photomask Technology 2024, 132160B (13 November 2024); https://doi.org/10.1117/12.3036729

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