Presentation + Paper
12 November 2024 PEC parameter optimization for EUV short-range effect utilizing MPC model calibration techniques
Yohei Torigoe, Itaru Ono, Ahmad Syukri, Yutaro Sato, Sun Young Kim, Boram Lee, Sukho Lee, Eok Bong Kim, Sanghee Lee
Author Affiliations +
Abstract
In Electron Beam (EB) exposure for Extreme Ultraviolet (EUV) masks, it is well known that the backscattering behavior differs significantly from conventional photomasks due to their film structure. In particular, short-range scattering derived from the Mo/Si multilayer film increases, causing the resist film to be more strongly affected within narrower range. To compensate for the error in Critical Dimension (CD), Proximity Effect Correction (PEC) in EB writer must be aware of this short-range scattering. While PEC calibration is typically done using the expertise of skilled engineers, adjusting the parameters of the multi-gaussian model significantly increases the burden on engineers due to the complexity of the phenomenon. In this paper, we introduce a method that automates the procedure of PEC parameter optimization by applying Mask Process Correction (MPC) model calibration techniques and providing feedback on backscattering components from empirically fitted model. Through demonstration of exposure experiments, we confirmed that accurate PEC optimization can be achieved by calibrating the MPC model using well-designed gauge patterns and exposure conditions.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yohei Torigoe, Itaru Ono, Ahmad Syukri, Yutaro Sato, Sun Young Kim, Boram Lee, Sukho Lee, Eok Bong Kim, and Sanghee Lee "PEC parameter optimization for EUV short-range effect utilizing MPC model calibration techniques", Proc. SPIE 13216, Photomask Technology 2024, 132160K (12 November 2024); https://doi.org/10.1117/12.3034490
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KEYWORDS
Calibration

Backscatter

Critical dimension metrology

Extreme ultraviolet

Mathematical optimization

Photomasks

Mathematical modeling

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