A study on programmed defect propagation from design to mask to wafer using SEM metrology

Balakumar Baskaran; Mohamed Saib; Bojja Aditya Reddy; Matteo Beggiato; Mihir Gupta; Christophe Beral; Anne-Laure Charley; Gian Lorusso; Joost Bekaert; Philippe Leray

doi:10.1117/12.3035709

12 November 2024 A study on programmed defect propagation from design to mask to wafer using SEM metrology

Balakumar Baskaran, Mohamed Saib, Bojja Aditya Reddy, Matteo Beggiato, Mihir Gupta, Christophe Beral, Anne-Laure Charley, Gian Lorusso, Joost Bekaert, Philippe Leray

Author Affiliations +

Proceedings Volume 13216, Photomask Technology 2024; 132160Z (2024) https://doi.org/10.1117/12.3035709
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States

Abstract

In our pursuit of ever-shrinking critical dimensions, it is crucial for High Volume Manufacturing (HVM) to have a comprehensive understanding of defectivity at different levels of patterning. Understanding the transferability of defects at the mask writing level (from design to mask) and the printability of these defects on the wafers (from mask to wafer) systematically, i.e., using Programmed Defects (PDs) could be used to provide feedback on process development and therefore improve the yield. This feedback could be in the form of i) identifying limitations of the mask writing process, ii) isolating mask and scanner contribution to wafer printing, iii) comparing different Litho/ Etch processes, and iv) potentially helping to understand the evolution of more complex structures such as tip-to-tip features. In this work, we demonstrate a methodology for defect extraction from mask and wafer SEM images and showcase the usefulness of studying the transferability of programmed defect patterns. In particular, we will present findings on the printing behavior of bridges and breaks, from design to mask, on pitch 28nm and pitch 24nm line/space patterns. Furthermore, our work also highlights trends observed by following the evolution of those mask defect patterns across the litho and etch processes relevant to the state-of-the-art technology node.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Balakumar Baskaran, Mohamed Saib, Bojja Aditya Reddy, Matteo Beggiato, Mihir Gupta, Christophe Beral, Anne-Laure Charley, Gian Lorusso, Joost Bekaert, and Philippe Leray "A study on programmed defect propagation from design to mask to wafer using SEM metrology", Proc. SPIE 13216, Photomask Technology 2024, 132160Z (12 November 2024); https://doi.org/10.1117/12.3035709

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