Design of high-performance terahertz photoconductive detectors based on MSM metasurfaces

Junyao Zhang; Yiwen Wu; Ming Zhang

doi:10.1117/12.3035272

8 November 2024 Design of high-performance terahertz photoconductive detectors based on MSM metasurfaces

Junyao Zhang, Yiwen Wu, Ming Zhang

Proceedings Volume 13247, Infrared, Millimeter-Wave, and Terahertz Technologies XI; 132470D (2024) https://doi.org/10.1117/12.3035272
Event: SPIE/COS Photonics Asia, 2024, Nantong, Jiangsu, China

Conference Poster

Abstract

Terahertz wave has been widely used in medical imaging, sensing, and communication. The terahertz (THz) detector is an effective means to obtain information and images. Meanwhile, high-sensitivity THz detectors are necessary for detection and communication systems. However, most of the previously proposed terahertz detectors use butterfly or dipole antennas, which have low responsivity and narrow response bandwidth, limiting the detection of continuous and weak signals. In this work, a photoconductive detector based on metasurface is proposed. In order to improve the terahertz absorption effect of the detector, a metal-semiconductor-metal (MSM) unit array structure is employed. Gallium arsenide (GaAs) has the advantages of direct band gap (1.42 eV), high photo-electric conversion rate and high electron mobility, making it an ideal building block for the preparation of photodetectors. The influence of different structures on the light absorption intensity of the detector is simulated by the finite difference time domain (FDTD) method. The optimized structure achieves absorption of over 99.9% in the corresponding band. Therefore, theoretically determining the metasurface structure can enhance the light absorption intensity of the detector, and provide support for optimizing the structural parameters and realizing a broadband terahertz detector. The current and voltage response of the designed photoconductive detector under given conditions were modeled and analyzed by SILVACO. Among them, the responsivity of the device can reach 0.36 A/W at 0.3V bias voltage and 0.9mW incident light power. The designed metasurface and detector have simple structure and easy fabrication. This design provides a new idea and technical method for the design of terahertz detector.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Junyao Zhang, Yiwen Wu, and Ming Zhang "Design of high-performance terahertz photoconductive detectors based on MSM metasurfaces", Proc. SPIE 13247, Infrared, Millimeter-Wave, and Terahertz Technologies XI, 132470D (8 November 2024); https://doi.org/10.1117/12.3035272

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available