Photoluminescence and surface photovoltaic spectra of strained InP on GaAs by MOCVD

Weihua Zhuang; Chaoyang Chen; Da Teng; Jinzhong Yu; Yuzhang Li

doi:10.1117/12.24325

1 March 1991 Photoluminescence and surface photovoltaic spectra of strained InP on GaAs by MOCVD

Weihua Zhuang, Chaoyang Chen, Da Teng, Jinzhong Yu, Yuzhang Li

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24325
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

A high energy shift of the band-band recombination has been observed in the PL spectra of the strained InP epilayer on GaAs by MOCVD. The strain determined by PL peak is in good agreement with calculated thermal strain. The surface photovoltalic spectra gives the informations about energy gap lattice mismatching and composition of heteroepilayers diffusion length surface and interface recombination velocity of minority carriers of heteroepitaxy layers.

Citation Download Citation

Weihua Zhuang, Chaoyang Chen, Da Teng, Jinzhong Yu, and Yuzhang Li "Photoluminescence and surface photovoltaic spectra of strained InP on GaAs by MOCVD", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24325

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