Transient of electrostatic potential at GaAs/AlAs heterointerfaces characterized by x-ray photoemission spectroscopy

Kazuhiko Hirakawa; Y. Hashimoto; Toshiaki Ikoma

doi:10.1117/12.24361

1 March 1991 Transient of electrostatic potential at GaAs/AlAs heterointerfaces characterized by x-ray photoemission spectroscopy

Kazuhiko Hirakawa, Y. Hashimoto, Toshiaki Ikoma

Author Affiliations +

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24361
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

We systematically studied the Ga3d and A12p cation core level binding energies in molecular beam epitaxially grown GaAs/AlAs heterostructures by in-situ x-ray photoemission spectroscopy. The valence band offset v at GaAs/AlAs interfaces is found to be independent of the crystallographic orientation and determined to be 0. 44 0. 05 eV. Furthermore we found that the cation core level binding energies in the extreme vicinity of the interface are shifted by -0. 1 eV from their respective bulk values which clearly indicates that the charge distribution and the resulting band offsets have a transient over a distance of at least 2 monolayers from the heterointerface.

Citation Download Citation

Kazuhiko Hirakawa, Y. Hashimoto, and Toshiaki Ikoma "Transient of electrostatic potential at GaAs/AlAs heterointerfaces characterized by x-ray photoemission spectroscopy", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24361

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