Paper
1 November 1991 Formation of titanium nitride films by Xe+ ion-beam-enhanced deposition in a N2 gas environment
Xi Wang, Gen Qing Yang, Xiang Huai Liu, Zhi Hong Zheng, Wei-Shi Huang, Zu Yao Zhou, Shichang Zou
Author Affiliations +
Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47317
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
A new method in which electron beam evaporation of titanium and bombardment with 40 keV Xe+ ion beam (Xe+-IBED) were done simultaneously in a N2 gas environment, has been developed to prepared titanium nitride films. It was confirmed that the xenon content in the films is very low and the N to Ti elemental ratios of the films approach unit. The films are mainly composed of TiN polycrystalline. The hardness of the films reaches 2200 kgmm-2, higher than that of films prepared by 40 keV N+-IBED. Moreover, some industrial applications of Xe+-IBED titanium nitride films have been reported.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xi Wang, Gen Qing Yang, Xiang Huai Liu, Zhi Hong Zheng, Wei-Shi Huang, Zu Yao Zhou, and Shichang Zou "Formation of titanium nitride films by Xe+ ion-beam-enhanced deposition in a N2 gas environment", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47317
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KEYWORDS
Titanium

Xenon

Ion beams

Nitrogen

Tin

Ions

Electron beams

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