Paper
1 November 1991 Structural investigations of the (Si1-x,Gex)O2 single-crystal thin films by x-ray photoelectron spectroscopy
Svetlana Sorokina, Juriy Dikov
Author Affiliations +
Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47304
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The electron structure of the SiO2-GeO2 single crystal thin films has been investigated by x-ray photoelectron spectroscopy (XPS). The growth of the high-germanium a-quartz was performed under hydrothermal conditions, applying a technique that involves high-alkaline solutions. The quartz crystals with germanium oxide content up to 14 mol% have been obtained for the first time. The XPS experiments were carried out using a photoelectron spectrometer (ES-2401). The XPS data show evidence for high separation of the [SiO4]n and [GeO4]n clusters, because the charged parameters for these atoms are not subjected to mutual excitation to remain close to initial SiO2 and GeO2.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Svetlana Sorokina and Juriy Dikov "Structural investigations of the (Si1-x,Gex)O2 single-crystal thin films by x-ray photoelectron spectroscopy", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47304
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KEYWORDS
Germanium

Crystals

Thin films

Oxides

Quartz

Silicon

Photoemission spectroscopy

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