Thermal stabilities of a-Si:H films and its application to thyristor elements

Yue Zhen Sun; Chun Xian Chen; Qi Yao Xie; Chen Zhong Yin; Yuliang L. He

doi:10.1117/12.47328

1 November 1991 Thermal stabilities of a-Si:H films and its application to thyristor elements

Yue Zhen Sun, Chun Xian Chen, Qi Yao Xie, Chen Zhong Yin, Yuliang L. He

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47328
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

We report on hydrogenate amorphous silicon (a-Si:H) films as unique passivation films for crystal silicon (C-Si) devices used on the thyristor elements. It's shown that a-Si:H passivation films could be used to raise the forward and reverse breakdown voltage over a wide range, as well as to improve the high temperature feature for thyristor elements. There are economic results. The a-Si:H passivation films have a novel ability to attract the impurities from the interface of c-Si device to the a-Si:H films and promote the c-Si devices with high quality. We also discuss the thermal stability of a-Si:H passivation films.

Citation Download Citation

Yue Zhen Sun, Chun Xian Chen, Qi Yao Xie, Chen Zhong Yin, and Yuliang L. He "Thermal stabilities of a-Si:H films and its application to thyristor elements", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47328

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