Epitaxial growth and processing of Si1-xGex/Si for heterojunction bipolar transistors using rapid thermal techniques

Judy L. Hoyt; T. Ghani; D. B. Noble; James F. Gibbons

doi:10.1117/12.56666

1 February 1992 Epitaxial growth and processing of Si_1-xGe_x/Si for heterojunction bipolar transistors using rapid thermal techniques

Judy L. Hoyt, T. Ghani, D. B. Noble, James F. Gibbons

Author Affiliations +

Proceedings Volume 1595, Rapid Thermal and Integrated Processing; (1992) https://doi.org/10.1117/12.56666
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

Processing and materials issues for the fabrication of Si/Sii_Ge/Si heterojunction bipolar transistors (HBTs) are discussed, particularly as they relate to the use of rapid thermal processing techniques. The addition of Ge to the base of the bipolar transistor provides the ability to tailor the bandgap throughout the device for optimum performance. However, these devices pose several challenging process integration issues. The sensitivity of device performance to temperature-time exposure originates from fundamental processes such as islanding during growth and annealing, impurity incorporation in Sii_Ge, dopant diffusion in and from Sii_Ge layers, and the formation of misfit dislocations. Each of these issues sets constraints on processing variables such as temperature, time, and ambient purity, and on device design parameters such as Ge and dopant depth profiles. Rapid thermal processing techniques may offer advantages in several of these areas.

Citation Download Citation

Judy L. Hoyt, T. Ghani, D. B. Noble, and James F. Gibbons "Epitaxial growth and processing of Si_1-xGe_x/Si for heterojunction bipolar transistors using rapid thermal techniques", Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); https://doi.org/10.1117/12.56666

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