Paper
2 December 1992 Modulation characteristics of vertical-cavity surface-emitting lasers
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Abstract
Vertical cavity surface emitting lasers (VCSELs) with a low threshold current and a large modulation bandwidth are desirable for applications in digital and analog optoelectronic signal processing and optical interconnection. These lasers emit light perpendicular to the surface of the semiconductor wafer and allow processing and optoelectronic integration using planar techniques. They also have a short optical cavity and small active volume that promise high speed and low threshold current operation. In this paper we describe the high frequency response characteristics of low threshold current surface emitting lasers we have developed. The laser is a GaAs vertical cavity surface emitting laser with a single quantum well active region and a short Bragg reflector cavity. We describe the key dc operation characteristics of the laser, such as threshold current, device resistance, and differential quantum efficiency that are important to laser high speed operation. The investigation of the dynamic response of the lasers under various direct current modulation conditions is discussed, and experimental results on modulation response and second harmonic distortion are presented. The limitations on high speed response and the effect of parasitic impedance on dynamic response of the laser are described.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. C. Wang, Thaddeus G. Dziura, and Y. J. Yang "Modulation characteristics of vertical-cavity surface-emitting lasers", Proc. SPIE 1703, Optical Technology for Microwave Applications VI and Optoelectronic Signal Processing for Phased-Array Antennas III, (2 December 1992); https://doi.org/10.1117/12.138403
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KEYWORDS
Modulation

Vertical cavity surface emitting lasers

Resistance

Distortion

Laser damage threshold

Diffusion

Semiconducting wafers

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