Nonlinear optical diagnostics of the properties of IV-VI semiconductor epitaxial structures

Lubomir I. Pavlov; Plamen P. Paskov

doi:10.1117/12.58643

1 April 1992 Nonlinear optical diagnostics of the properties of IV-VI semiconductor epitaxial structures

Lubomir I. Pavlov, Plamen P. Paskov

Proceedings Volume 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces; (1992) https://doi.org/10.1117/12.58643
Event: LAMILADIS '91: International Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, 1991, Chernivsti, Ukraine

Abstract

Nonlinear behavior of optical properties of PnSnTe epitaxial structures excited by CO₂ laser pulses is investigated. Fast optical switching and bistability are observed. Numerical modeling of the experiment with an account for the dynamics of the noneuqilibrium carriers and the sample temperature is performed. Carrier-induced nonlinear refractive cross-section of the studied compound is determined.

Citation Download Citation

Lubomir I. Pavlov and Plamen P. Paskov "Nonlinear optical diagnostics of the properties of IV-VI semiconductor epitaxial structures", Proc. SPIE 1723, LAMILADIS '91 Intl Workshop: Laser Microtechnology and Laser Diagnostics of Surfaces, (1 April 1992); https://doi.org/10.1117/12.58643

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