Recent developments in CdZnTe gamma-ray detector technology

Jack F. Butler; F. Patrick Doty; Clinton L. Lingren

doi:10.1117/12.138580

22 December 1992 Recent developments in CdZnTe gamma-ray detector technology

Jack F. Butler, F. Patrick Doty, Clinton L. Lingren

Proceedings Volume 1734, Gamma-Ray Detectors; (1992) https://doi.org/10.1117/12.138580
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

A discussion of recent results in the preparation of Cd_1-xZn_xTe crystals by a high pressure Bridgman (HPB) method and use of the crystals for gamma- and x-ray detectors is presented. Resistivities in excess of 10¹¹ ohm-cm are achieved in Cd_1-xZn_xTe without impurity doping. The consequential low detector leakage currents lead to excellent energy resolution, 8.4% (FWHM) at 30 keV, for example. Useful energy spectroscopy can be performed at temperatures up to 100 degree(s)C. The dependence of leakage current on temperature from -40 degree(s)C to 100 degree(s)C implies a Fermi level at mid-gap for x equals 0.2. HPB grown Cd_1-xZn_xTe crystals exhibit relatively low defect content, as evidenced by etch-pit-densities <EQ 10⁴ cm^-2, double-crystal-rocking-curve linewidths of 10 - 15 arc-seconds and sharp, bright emission lines, with excitonic features, in low temperature photoluminescence measurements. Results of flash x ray experiments indicate high current sensitivity, low leakage current, and good temporal response. Preliminary results of Cd_1-xZn_xTe imaging detector array studies are discussed.

Citation Download Citation

Jack F. Butler, F. Patrick Doty, and Clinton L. Lingren "Recent developments in CdZnTe gamma-ray detector technology", Proc. SPIE 1734, Gamma-Ray Detectors, (22 December 1992); https://doi.org/10.1117/12.138580

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