Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and Si substrates

Elliott R. Brown; F. W. Smith; George W. Turner; K. Alexander McIntosh; M. J. Manfra

doi:10.1117/12.138635

10 December 1992 Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and Si substrates

Elliott R. Brown, F. W. Smith, George W. Turner, K. Alexander McIntosh, M. J. Manfra

Proceedings Volume 1735, Infrared Detectors: State of the Art; (1992) https://doi.org/10.1117/12.138635
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

Nominally identical multiple-quantum-well detectors have been fabricated on GaAs and Si substrates, and the performance of these detectors has been compared at a temperature of 77 K and a wavelength of 10.2 micrometers . The two different substrates yield practically identical absorption characteristics, but the detector on the GaAs substrate has an approximately 60% higher specific detectivity because of its higher photoconductive gain and lower dark-current density.

Citation Download Citation

Elliott R. Brown, F. W. Smith, George W. Turner, K. Alexander McIntosh, and M. J. Manfra "Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and Si substrates", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.138635

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