III-V Heterostructure Devices For Integrated Optics

James L. Merz

doi:10.1117/12.957225

26 July 1979 III-V Heterostructure Devices For Integrated Optics

James L. Merz

Proceedings Volume 0176, Guided Wave Optical Systems and Devices II; (1979) https://doi.org/10.1117/12.957225
Event: Technical Symposium East, 1979, Washington, D.C., United States

Abstract

A review is given of recent progress in the development of integrated optical circuits involving the Al Ga1-x As/GaAs double heterostructure system. Various devices utilizing x. periodic corrugations or gratings are described briefly, whereas alternate attempts to fabricate optical circuits by wet chemical etching are discussed in more detail. The current trend to explore other III-V compounds is considered, with emphasis on the quaternary system GaxIni-xPyAs1-y Lattic matching of this quaternary to InP results in long wave-length emission, suitable for use with present optical fibers. A number of reasons are also given for increased investigation of this quaternary lattice-matched to GaAs.

Citation Download Citation

James L. Merz "III-V Heterostructure Devices For Integrated Optics", Proc. SPIE 0176, Guided Wave Optical Systems and Devices II, (26 July 1979); https://doi.org/10.1117/12.957225

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