Polishing characteristics of different glass films

Robert Tolles; Hubert M. Bath; B. Doris; Rahul Jairath; Robert Leggett; Siva Sivaram

doi:10.1117/12.145480

21 May 1993 Polishing characteristics of different glass films

Robert Tolles, Hubert M. Bath, B. Doris, Rahul Jairath, Robert Leggett, Siva Sivaram

Proceedings Volume 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations; (1993) https://doi.org/10.1117/12.145480
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Chemical Mechanical Polishing (CMP) is becoming a mainstream technology for the planarization of dielectrics at various process levels. Widely different types of glass films are now routinely processed using CMP techniques. In this work, the polish rates using an aqueous silica based slurry for thermally grown SiO₂, plasma deposited SiO₂, and boro-phospho-silicate glasses have been compared. A polishing mechanism based on the concentration of water in the glass is proposed. It is also shown that the presence of phosphorous changes the polishing mechanism compared to undoped glasses and the rate increase due to phosphorous is much greater than that due to boron.

Citation Download Citation

Robert Tolles, Hubert M. Bath, B. Doris, Rahul Jairath, Robert Leggett, and Siva Sivaram "Polishing characteristics of different glass films", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145480

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