Thermally induced stresses and electromigration failure

Larisa Kisselgof; S. P. Baranowski; Mike C. Broomfield; T. Spooner; L. Elliott; L. Brooke; James R. Lloyd

doi:10.1117/12.145478

21 May 1993 Thermally induced stresses and electromigration failure

Larisa Kisselgof, S. P. Baranowski, Mike C. Broomfield, T. Spooner, L. Elliott, L. Brooke, James R. Lloyd

Proceedings Volume 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations; (1993) https://doi.org/10.1117/12.145478
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Attempts to improve the reliability of narrow passivated Al/Cu conductors as defined by the performance in an accelerated electromigration test are reviewed. The results are explained in terms of the effect of thermally induced stress and stress voiding on electromigration lifetime. Other processing variations which produced small or inconsequential changes are also discussed. In addition, it was observed that electromigration performance in samples susceptible to stress voiding was degraded as a function of storage time at room temperature.

Citation Download Citation

Larisa Kisselgof, S. P. Baranowski, Mike C. Broomfield, T. Spooner, L. Elliott, L. Brooke, and James R. Lloyd "Thermally induced stresses and electromigration failure", Proc. SPIE 1805, Submicrometer Metallization: Challenges, Opportunities, and Limitations, (21 May 1993); https://doi.org/10.1117/12.145478

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