Infrared introscopy and microtomography of semiconductor structures

Leonid Aksenov; Vitaly V. Aristov; Konstantin Frolov; Edward I. Rau

doi:10.1117/12.131902

3 November 1992 Infrared introscopy and microtomography of semiconductor structures

Leonid Aksenov, Vitaly V. Aristov, Konstantin Frolov, Edward I. Rau

Proceedings Volume 1843, Analytical Methods for Optical Tomography; (1992) https://doi.org/10.1117/12.131902
Event: Analytical Methods for Optical Tomography, 1991, Zvenigorod, Russian Federation

Abstract

Some new physical and technical solutions applied to the development of laser diagnostic complex for the study of local electro-physical and structural characteristics of semiconductor materials and microelectronic devices are presented. The potentialities of introscopy and microtomography in laser scanning microscope when detecting different informative response signals are discussed. Original methods and operation modes for scanning microscopy and tomography of semiconductor crystals are described, in particular, the results of computer and apparatus microtomography using transmitted, scattered, polarized infrared radiation, and optically induced photocurrent.

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Leonid Aksenov, Vitaly V. Aristov, Konstantin Frolov, and Edward I. Rau "Infrared introscopy and microtomography of semiconductor structures", Proc. SPIE 1843, Analytical Methods for Optical Tomography, (3 November 1992); https://doi.org/10.1117/12.131902

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