Laser ablation/ionization analysis of trace impurities from bulk materials

Sergey Sergeivich Alimpiev; M. E. Belov; Sergey M. Nikiforov

doi:10.1117/12.148511

2 July 1993 Laser ablation/ionization analysis of trace impurities from bulk materials

Sergey Sergeivich Alimpiev, M. E. Belov, Sergey M. Nikiforov

Proceedings Volume 1857, Lasers and Optics for Surface Analysis; (1993) https://doi.org/10.1117/12.148511
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

Laser ablation followed by resonant-enhanced multiphoton ionization combined with RETOF mass-spectrometry was used for trace element analysis of industry-made semiconductor samples and organic compounds. Ablated neutral species entered an ion extraction system where they were resonantly excited via intermediate atomic levels and ionized by ionization lasers, accelerated to 1.7 keV energy, reflected by a gridless ion mirror and detected by a double-microchannel plate assembly. Detection limit down to 1 ppb was achieved for the number of trace elements (Fe, B, Cr, Al).

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Sergey Sergeivich Alimpiev, M. E. Belov, and Sergey M. Nikiforov "Laser ablation/ionization analysis of trace impurities from bulk materials", Proc. SPIE 1857, Lasers and Optics for Surface Analysis, (2 July 1993); https://doi.org/10.1117/12.148511

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