Chemical amplification positive deep-UV resist using partially tetrahydropyranyl-protected polyvinylphenol

Takashi Hattori; Leo Schlegel; Akira Imai; Nobuaki Hayashi; Takumi Ueno

doi:10.1117/12.154747

15 September 1993 Chemical amplification positive deep-UV resist using partially tetrahydropyranyl-protected polyvinylphenol

Takashi Hattori, Leo Schlegel, Akira Imai, Nobuaki Hayashi, Takumi Ueno

Author Affiliations +

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154747
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

Chemical amplification positive resists using tetrahydropyranyl-protected polyvinylphenol (THP-M) were investigated for deep UV lithography. Infrared spectroscopy measurements showed that THP-M in the resist film cannot be completely deprotected by photo-generated acid. This causes a poor developability of the resist containing highly tetrahydropyranyl (THP)-protected polyvinylphenol in an aqueous base developer. In order to improve the developability in the pure aqueous base developer, we utilized partially THP-protected polyvinylphenol. To determine the optimum protection degree, we examined the relation between the dissolution rate of THP-M films and THP-protection degree in developers. A resist formulated from 20% THP-protected polyvinylphenol and bis(tert-butylphenyl)iodonium triflate resolved 0.30 micrometers line-and-space patterns with the aqueous base development using a KrF excimer laser stepper with a dose of 46 mJ/cm².

Citation Download Citation

Takashi Hattori, Leo Schlegel, Akira Imai, Nobuaki Hayashi, and Takumi Ueno "Chemical amplification positive deep-UV resist using partially tetrahydropyranyl-protected polyvinylphenol", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154747

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