Evaluation of liquid silylated resists for 213-nm exposure

John M. Hutchinson; K. Kalpakjian; Robert Schenker; William G. Oldham

doi:10.1117/12.154777

15 September 1993 Evaluation of liquid silylated resists for 213-nm exposure

John M. Hutchinson, K. Kalpakjian, Robert Schenker, William G. Oldham

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154777
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

We explore the bulk and imaging properties of two commercially available resists, Shipley SAL-601 and AZ 5214, to 213 nm radiation operating in a liquid silylation mode. We use FTIR and thickness measurements to characterize the silicon uptake process, and explore the use of high frequency RIE etching of silylated resists to increase selectivity and reduce post- etch residues. We demonstrate sub quarter micron lithography using 213 nm exposure of a liquid silylation resist process etched in a 60 MHz O₂ plasma.

Citation Download Citation

John M. Hutchinson, K. Kalpakjian, Robert Schenker, and William G. Oldham "Evaluation of liquid silylated resists for 213-nm exposure", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154777

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