Vapor phase epitaxy of ZnTe on silicon substrates

Ishwara B. Bhat; Wen-Sheng Wang; Sudhir B. Trivedi; G. V. Jagannathan; Ronald G. Rosemeier; James J. Kennedy

doi:10.1117/12.164934

7 December 1993 Vapor phase epitaxy of ZnTe on silicon substrates

Ishwara B. Bhat, Wen-Sheng Wang, Sudhir B. Trivedi, G. V. Jagannathan, Ronald G. Rosemeier, James J. Kennedy

Proceedings Volume 2021, Growth and Characterization of Materials for Infrared Detectors; (1993) https://doi.org/10.1117/12.164934
Event: SPIE's 1993 International Symposium on Optics, Imaging, and Instrumentation, 1993, San Diego, CA, United States

Abstract

We report for the first time the growth of high quality Zn Te epilayers on silicon substrates by Metal Organic Vapor Phase Epitaxy (MOVPE). ZnTe layers up to 7μm thick were grown on (001) silicon substrates at 420°C-450°C substrate temperatures. The layers were mirror shiny and smooth, devoid of growth features like layered or stepped structures. The x-ray double crystal diffraction showed that best ZnTe layers exhibited Full Width at Half Maximum (FWHM) of 110 arc seconds. Further optimization of the growth procedure will make this material very useful for the potential development of iow cost infrared focal plane arrays and other optoelectronic devices which use direct wide band gap ZnTe.

Citation Download Citation

Ishwara B. Bhat, Wen-Sheng Wang, Sudhir B. Trivedi, G. V. Jagannathan, Ronald G. Rosemeier, and James J. Kennedy "Vapor phase epitaxy of ZnTe on silicon substrates", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); https://doi.org/10.1117/12.164934

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