Interaction between photoresist pretreatment and high-aspect-ratio contact and via hole definition

Kevin C. Brown; Linda J. Insalaco; Elina C. Szeto

doi:10.1117/12.156531

15 September 1993 Interaction between photoresist pretreatment and high-aspect-ratio contact and via hole definition

Kevin C. Brown, Linda J. Insalaco, Elina C. Szeto

Proceedings Volume 2090, Multilevel Interconnection: Issues That Impact Competitiveness; (1993) https://doi.org/10.1117/12.156531
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

The relationship between photoresist treatment prior to etch and subsequent oxide sidewall hole profile is investigated. Etched features were examined immediately after resist pattern definition with post-expose bake, then after oven hard bake or deep UV photostabilization. It was observed that taper of the etched oxide profile depends on pre-treatment temperature. Etch chemistry influences the relative change in taper across a range of pre-treatment temperatures. `Bowing,' as well as reticulated or `burnt' resist is eliminated. Profile variation across the wafer is reduced with deep UV photostabilization. Microscopic etch uniformity (RIE lag) also depends on the interaction between resist pre-treatment and oxide etch chemistry.

Citation Download Citation

Kevin C. Brown, Linda J. Insalaco, and Elina C. Szeto "Interaction between photoresist pretreatment and high-aspect-ratio contact and via hole definition", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); https://doi.org/10.1117/12.156531

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