Time-resolved far infrared magnetospectroscopy of ultra-high mobility n-GaAs layersand GaAs/alGaAs multi quantum wells

J. M. Chamberlain

doi:10.1117/12.2298757

30 November 2017 Time-resolved far infrared magnetospectroscopy of ultra-high mobility n-GaAs layersand GaAs/alGaAs multi quantum wells

J. M. Chamberlain

Author Affiliations +

Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 210491 (2017) https://doi.org/10.1117/12.2298757
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom

Abstract

The time-resolved (TR) FIR photoconductivity of exceptionally high mobility n-GaAs (Ã‚Âµ =250,000 cm2V-1s-1) samples hasbeen measured at 1.8K and in magnetic fields up to 8T using short (5ns) FIR pulses. The photoconductive decay time- constant (r) is determined at zero magnetic field and at several non-zero fields with FIR laser energies resonant with the 1s- 2p+ impurity transition. Comparisons are made with previous measurements on MQWs and a simple Golden Rule theory.

Citation Download Citation

J. M. Chamberlain "Time-resolved far infrared magnetospectroscopy of ultra-high mobility n-GaAs layersand GaAs/alGaAs multi quantum wells", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 210491 (30 November 2017); https://doi.org/10.1117/12.2298757

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